| 摘要 |
PURPOSE:To increase adhesion between an electrode and a semiconductor substrate, to improve workability and to enhance reliability by forming an Au or Au alloy layer adjacent to the semiconductor substrate with an active or passive element. CONSTITUTION:An electrode functioning as a pad is shaped continuously through a vacuum deposition method using the so-called E-gun. The perforated pattern of a resist is formed to an InGaAsP substrate 1 to which an element is shaped, the substrate is set into a vacuum deposition device using the degree of vacuum of 2X10<-6> torr as a lower limit, and an Au layer 2 in 500Angstrom , a Ti layer 3 in 1000Angstrom , a Pt layer 4 in 1000Angstrom and an Au layer 5 in 5000Angstrom are laminated in succession. Heat treatment is executed in an inert (N2) atmosphere held at 400-450 deg.C, an electrode is also formed on the rear side of the InGaAsP substrate 1, and a plurality of the metallic layers laminated are over-coated with Au 6 in 5000Angstrom , thus shaping a semiconductor element electrode. |
