| 摘要 |
The method for epitaxially depositing a silicon layer onto a substrate or onto a plurality of substrates includes the following steps: providing said substrate or substrates in a hot wall, thermally driven CVD apparatus, establishing a total base pressure less than about 1.33 <.> 10<-><8>mbar in said apparatus, establishing a deposition temperature less than about 800 DEG C in said apparatus, introducing a gas containing silicon into said apparatus which gas interacts heterogeneously with said substrate or substrates to deposit a layer of silicon epitaxially thereon, the total operating pressure of said gas containing silicon being less than several hundred mu bar (several hundred mTorr), and continuing said deposition until a desired thickness of epitaxial silicon is obtained. With the method epitaxial silicon layers suitable for device applications are formed at low temperatures. The epitaxial silicon layers can be doped in-situ to provide very abruptly defined regions of either n- or p-type conductivity. |
