发明名称 |
Method of preventing hillock formation in polysilicon layer by oxygen implanation |
摘要 |
Hillock formation as a result of heating uncapped polycrystalline silicon layers can be avoided by first implanting the uncapped poly layers with silicon, oxygen, or nitrogen prior to heating. Equivalent mono-atomic oxygen or nitrogen doses in the range of about 1015 to about 5x1016 ions/cm2 at energies in the range 10-50 keV are useful with good results being obtained with equivalent oxygen doses of 2x1015 ions/cm2 at 30 keV. When polysilicon layers with this oxygen implant are heated to about 1150 degrees C., a temperature which would ordinarily produce pronounced hillock formation in un-capped, un-treated poly layers, it is found that hillock formation is suppressed. The implanted oxygen concentrations are far below what is required to produce a separate oxide layer or phase. Some effect on poly layer sheet resistance is observed for implanted oxygen but the implanted layers have sheet resistances within a factor of two of those without the oxygen implants.
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申请公布号 |
US4740481(A) |
申请公布日期 |
1988.04.26 |
申请号 |
US19860820858 |
申请日期 |
1986.01.21 |
申请人 |
MOTOROLA INC. |
发明人 |
WILSON, SYD R.;GREGORY, RICHARD B.;VARKER, CHARLES J. |
分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L21/3215;(IPC1-7):H01L21/265;H01L29/04 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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