发明名称 LASER-INDUCED THIN FILM DEPOSITION APPARATUS
摘要 PURPOSE:To effectively use the ion element for thin film deposition and improve the deposition rate by causing the electric field application direction to match the direction in which the ion runs to the substrate. CONSTITUTION:In the laser CVD method without DC electric field, the ions generated in the laser beam diffuse also into the space in the opposite side of the substrate and such ions do not contribute to deposition of film. However, when the DC field is applied and such direction is matched with the direction is which the ions which contribute to deposition of film run to the substrate 2, the ion element among the free radical generated by optical reaction and ions is effectively used for deposition of thin film, realizing improvement of deposition rate. Moreover, impact on the substrate surface by the accelerated ions further improves close contactness between the substrate 2 and thin film and density of thin film, thus solving a problem in the optically excited CVD method that density of deposited film is low.
申请公布号 JPS62183512(A) 申请公布日期 1987.08.11
申请号 JP19860026125 申请日期 1986.02.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 ITO HIROMI
分类号 H01L21/31;C23C16/48;H01L21/205;H01L21/263 主分类号 H01L21/31
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