| 摘要 |
PURPOSE:To enable a metal silicide layer to be easily formed without being corrugated, by performing heat treatment for forming the metal silicide layer in a state in which a heat resisting layer is formed on the metallic layer. CONSTITUTION:An insulating material 2, which is equipped with a window 3 confronted outside by a semiconductor substrate 1 and is made of silicon oxide or the like, is formed on a semiconductor substrate 1. Then, on the surface side of the semiconductor substrate 1 and a region confronting the window 3 of the insulating layer 2, a N-type semiconductor layer 4 is formed, with its surrounding edge being situated below the insulating layer 2. And, a metallic layer 7 comprising metals such as molybdenum and titanium, and the oxide layer 8 of their metals form the metallic layer piled in their orders. Then, a heat-resisting layer 9 made of phosphor glass (PSG), silicone oxide (SiO2), and the like is formed on the metallic layer 1. Besides, the metallic layer 5 is made to react with the semiconductor layer 4 by heat treatment on a region confronting the window 3 of the insulating layer 2, to form a metallic silicide layer 6 made of the metal compositing the metallic layer 5 and the silicon composing the semiconductor layer 4. Finally, the heat-resisting layer 9 is removed from the semiconductor substrate 1 by the etching process and then the region, on which the metallic layer 5 is not reacting with the semiconductor layer 4, is removed.
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