| 摘要 |
PURPOSE:To form quantum thin line laser, by forming a striped ridge, whose cross section orientated in <0-1-1> is reverse metha-shaped, on a surface of a Zinc blende crystal substrate with a plane (100) and forming a double hetero structure, in which an active layer of quantum well structure is contained, on the ridge. CONSTITUTION:A striped ridge 2, whose cross section is orientated in <0-1-1>, is formed on a n-GaAs substrate 1 with a plane (100) A n-Ga1-xAlxAs clad layer 3 is made to grow 1.3 mum in thickness on the ridge by a MOCVD crystal growth method. Because growth crystal grows with the plane (111) exposed on the ridge 2, an angle of the ridge surface with the plane (111) becomes 54 deg.. Next, non-doped Ga1-yAlyAs layers 10 and Ga1-zAlzAs layers 9 are formed alternately on the clad layer 3 so that thickness of each layer is 100 Angstrom and the number of respective layers is 5. Successively, a p-Ga1-xAlxAs clad layer 4 is made to grow 2 mum (in thickness on a flat surface) and active regions 9 and 11 are filled with the clad layer 4. After a p-GaAs layer 5 is formed 0.5 mum, a SiO2 film 6 is sticked 3000 Angstrom on the layer 5 and a window 7 of 2 mum in width is opened just on the ridge 2. |
