发明名称 SPUTTERING TARGET AND ITS PRODUCTION
摘要 PURPOSE:To provide a sputtering target which can be reutilized as it is without breaking the used target material, by consisting said target of the used sputtering target material and a regenerated material which has the same compsn. as the compsn. of said material and is integrally formed on the reduced thickness surface of said target material. CONSTITUTION:The reduced thickness surface 2 of the used target material 1 is cleaned by a pickling means, etc., using acids such as hydrofluoric acid. Preferably powder 2' of the regenerated material having the same compsn. as the compsn. of the target material is imposed on the cleaned surface of the material imposed in a mold 4 and thereafter, the powder is tentatively molded by a suitable pressing pressure. The assembly obtd. in said process is housed into a prescribed container and is temporally calcined in a vacuum; thereafter, the powder is pressurized and calcined in a vacuum, inert gaseous atmosphere, etc. The above-mentioned vacuum degree is preferably <=1X10<-5>Torr. The calcination temp. varies with the kind of the target material and is usually preferably lower by 100-300 deg.C than the silicide forming temp.
申请公布号 JPS6393859(A) 申请公布日期 1988.04.25
申请号 JP19860239179 申请日期 1986.10.09
申请人 TOSHIBA CORP 发明人 FUKAZAWA MIHARU;YAMAGUCHI SATORU;ISHIGAMI TAKASHI
分类号 C23C14/34 主分类号 C23C14/34
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