| 摘要 |
PURPOSE:To suppress an adverse influence of lattice mismatch and to enhance a nonlinear optical effect by interposing a strain superlattice layer consisting of >=2 kinds of group II-VI semiconductors to a hetero junction of laminated structure. CONSTITUTION:A clad layer 2 consisting of the II-VI compd. semiconductor is formed by; for example, an org. metal vapor growth method, on a semiconductor substrate 1 and thereafter, the strain superlattice 3 is formed thereon. After the strain superlattice 3 is formed as an optical waveguide, a clad layer 2' is formed to constitute the laminated structure. The lattice mismatch is thus relieved and the generation of a defect such as misfit dislocation is suppressed by using the strain superlattice layer as an optical waveguide layer. The surface homology when the optical waveguide layer is epitaxially grown is extremely good. An effective band gap is controllable by changing the thickness of the quantum well layer in the strain superlattice structure, by which the light absorption end is easily controlled to the desired end. |
