发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a new hybrid type three-dimensional IC which realizes high density electrical connection by a method wherein semiconductor chips are provide on both surfaces of an anisotropic conductive film and the semiconductor chips are connected to each other through stripe wirings in the anisotropic conductive film. CONSTITUTION:In an anisotropic conductive film 2, stripe wirings 3 are formed vertically to the surface of the film 2 and independently from each other. Semiconductor chips 4a and 4b have required number of connection electrodes 5a and 5b at the respective corresponding positions. The semiconductor chips 4a and 4b are aligned while the connection electrodes 5a and 5b are facing the anisotropic conductive film 2 and are laminated on both the surfaces of the anisotropic conductive film 2 by thermocompression bonding or mechanical pressure. With this constitution, the respective corresponding connection electrodes 5a and 5b are connected to each other through the stripe wirings 3. Therefore, significant improvement of mounting density, improvement of operation speed owing to the reduction of wiring lengths and improvement of functional performance owing to combination of the chips whose functions, materials, manufacturing processes and so forth are different can be realized.
申请公布号 JPS6394661(A) 申请公布日期 1988.04.25
申请号 JP19860240006 申请日期 1986.10.08
申请人 SHARP CORP 发明人 RAI AKITERU;NUKUI TAKASHI
分类号 H01L25/18;H01L21/3205;H01L23/52;H01L25/04;H01L25/065;H01L25/07;H01L27/00 主分类号 H01L25/18
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