| 摘要 |
PURPOSE:To produce a wafer having uniform surface defects in high yield, by vertically applying a magnetic field to the surface of silicon melt in a crucible, pulling up single crystal, cutting the formed wafer, heating the cut wafer and carrying out these operations under specific conditions. CONSTITUTION:A magnetic field having 0.02-0.1T magnetic flux density is applied in the vertical direction to the surface of silicon melt in a crucible. In this case, seed crystal is immersed in the silicon melt and silicon single crystal is pulled up at number of revolutions of the crucible 0.1-10rpm and at number of revolutions of crystal of 15-25rpm. The wafer of the pulled silicon single crystal is cut out and the wafer is heat-treated at 700-800 deg.C for 10-25hr. Consequently, silicon wafer having a uniform minute defective layer on the interior and a uniform nondefective layer on the surface is obtained in high yield.
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