| 摘要 |
PURPOSE:To erase information by extracting hot electrons generated by avalanche-breaking-down a P-N junction formed in a floating gate. CONSTITUTION:On 'writing', a source 36 and a substrate 33 are grounded, positive high voltage is applied to a control gate 32, No.2 control gate 35 and a drain 37, and hot carriers generated by the drain avalanche phenomenon of an N channel MOS type transistor are injected to a floating gate. On 'erasing', the P-N junction of an N-type section 31 and a P-type section 34 is shaped into the floating gate, the potential of the P-N junction is controlled by coupling by capacitance and avalanche breakdown is generated, and hot carriers generated by avalanche breakdown are extracted to the outside of the floating gate, thus conducting erasing. |
