| 摘要 |
PURPOSE:To improve characteristics in controllability and stability of deposition conditions and deposit II-VI compound films on a substrate so that their excellent films in crystalline feature are sufficiently reproducible by independently performing temperature control of a heating part of evaporation source as well as a portion enclosed by wall parts and a lid. CONSTITUTION:A configuration of semiconductor deposition device such as a wall part 12 and a heating part 12a composed of boron nitride treatment and a lid 16 arranged at an upper side of wall part 12 permits heat capacity of the heating part 12a to be less than that of the wall part 12. In the meanwhile, a vacuum inlet port 18 and a vapor supply part 17 leading to the heating part 12a are arranged at the wall part 12 and an evaporation source 11 is accommodated at the heating part 12a. In addition, there is a substrate 13 on the lid 16, on which II-VI compound films are deposited. Subsequently, heaters 14a, 14, and 14b as well as thermocouples 15a, 15, and 15b mounted at the sides of lid 16, wall 12, and heating part 12a independently control the temperatures of respective portions and deposit the compound films on the substrate so that their excellent films in crystalline feature are made sufficiently reproducible.
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