| 摘要 |
PURPOSE:To reduce leakage currents, and to simplify a manufacturing process by forming electrodes in regions in which each p-n junction of p-type and N-type semiconductor films shaped onto a substrate is not formed. CONSTITUTION:CdS paste is applied onto a barium boro-silicate glass substrate 1 functioning as an acceptor impurity to CdS, and dried and baked to shape a CdS film 2 as an n-type semiconductor. The CdS film 2 is not formed in an electrode forming region for a p-type semiconductor at that time. CdTe paste is applied with the exception of the electrode forming region for the CdS film 2, and dried and baked. Carbon paste to which an acceptor impurity is added is applied onto the CdTe paste, and a carbon film 4 is Shaped through heat treatment. A CdTe film is changed into a P-type semiconductor at that time. Electrodes 5, 6 are formed. Accordingly, leakage currents by the diffusion of the metallic electrodes can be reduced. |
