| 摘要 |
PURPOSE:To prevent any crack on an interlayer insulating film and a surface protective film from occuring by means of covering the peripheral part of a chip with an electrode metal. CONSTITUTION:Within this semiconductor integrated circuit, a plasma nitride film layer 5 and another plasma nitride film 7 respectively fill the roles of an interlayer insulating film and a surface protective film. Silicon is exposed to the end 8 of a chip. The first aluminium evaporation layer 9 and the second aluminium evaporation layer 10 are provided between the surface film 7, the interlayer insulating film 5 and the end 8 of chip. The stress on chip due to resin sealing is compresion stress. In such a constitution, any crack on the interlayer insulating film and the surface protective film can be prevented from occuring by means of relieving the pressure of chip end on the interlayer insulating film and the surface protective film by covering the peripheral part of chip with aluminium.
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