| 摘要 |
PURPOSE:To cut down the cost of bonding material remarkably by eliminating the consumption of gold as bonding material by a method wherein the rear surface of a semiconductor element is brought into ohmic contact to be bonded only to a lead base solder material for bonding process. CONSTITUTION:An Ni 2 bonded to the surface of a silicon wafer 1 is sintered at relatively high temperature to form a nickel silicide layer 3 making the Ni 2 as a collector layer ohmic. A lead base solder material 4 as a bonding material is bonded onto the Ni 2. When a separated silicon element 7 with the rear surface thereof solder bonded is mounted on a leadframe 8 to be heated, the element 7 is bonded onto the frame 8 by solder 4. Through these procedures, the cost of bonding material can be cut down remarkably by eliminating the consumption of gold as the bonding material. |
