发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the generation of poor reverse withstanding voltage, by using a lead electrode having a plurality of projections, which are thinner than the thickness of a header part and are protruded from a semiconductor chip. CONSTITUTION:A semiconductor chip 2 and a lead electrode 3 are fixed to a recessed metal substrate 1 with a solder 4. An insulating resin 5 is injected in the substrate 1 after the exposed part of the P-N junction of the chip 2 is cleaned, and the resin is hardened. The exposed part is covered with the resin. Projection parts 3a are provided on a header part 3b from place to place. The projection part 3a is narrow and thin. The resin flows well and voids are not formed.
申请公布号 JPS6318650(A) 申请公布日期 1988.01.26
申请号 JP19860161878 申请日期 1986.07.11
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 NARITA KAZUTOYO;SAKAGAMI TADASHI;IWAMA TOSHIO
分类号 H01L23/48;H01L21/52;H01L25/10;H01L25/11 主分类号 H01L23/48
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