| 摘要 |
PURPOSE:To provide a device, in which an element area is small and a high integration density can be implemented, by providing second semiconductor layers having a second conductivity type and high impurity concentration on a first conductivity type, first semiconductor layer, and contacting a barrier metal with the first semiconductor layer so as to penetrate a part of the second semiconductor layers and to reach the first semiconductor layer. CONSTITUTION:On a P-type silicon substrate 11, an N<+> embedded layer 12 comprising Sb (antimony) is formed. Thereafter, an N-type epitaxial layer 13 with a thickness of about 3 mum is formed as a first semiconductor layer. Then, a P<+> outer base layer 17 and a P<-> inner base layer 18 are formed as high concentration, second semiconductor layers. Thereafter, a surface protective film 20, which corresponds to a part of the P<+> outer base layer 17, at the upper part, a thin oxide film 16 and a part of the base layer 17 are sequentially etched away so as to reach the epitaxial layer 13. A region 21, which is a part of the epitaxial layer 13, is exposed. Thus, a Schottky barrier diode can be formed in an arbitrary area, and the high integration density of high-speed bipolar transistor can be implemented. |
