| 摘要 |
Electro-optical screen and more particularly structure of cross-point transistor made with thin layers wherein there is provided a doubling of the line and column electrodes (LG, CL) by means of doubling elements (lg1, Col 1, Col 2), as well as a light screen (EC) protecting the transistor. The invention also relates to a method for making such a screen. The invention is applicable particularly in the technique of liquid crystal screens. |
