| 摘要 |
PURPOSE:To realize a TFT manufacturing method using single crystal Si and consisting of simple processes suitable for liquid-crystal displays, by forming a transistor in an island Si layer on an Si substrate, bonding an insulating substrate thereon and polishing the Si substrate so as to reduce the thickness thereof while leaving the transistor as it is. CONSTITUTION:An insulating film 3 is formed on an Si substrate 1, and Part of the insulating film 3 is removed to provide a window in the insulating film. An island Si layer 2 is formed selectively in the window of the insulating film 3. A transistor is provided such that source and drain regions 4, 5 thereof whose thickness is smaller than that of the insulating film 3 are located in said island Si layer 2. An insulating substrate 10 is bonded to the transistor provided side of the Si substrate 1. The Si substrate 1 is then polished from the opposite side to the transistor, so as to reduce the thickness thereof while leaving the insulating film 3 and the transistor as they are. The island Si layer 2 is etched partially or totally so that it is electrically contacted with the source and drain regions 4 and 5. Thereafter, source and drain electrodes 12 and 13 are provided. Said island Si layer 2 may be provided, for example, by an Si single crystal layer. |
