发明名称 |
SCHOTTKY DIODE LOGIC FOR E-MODE FET/D-MODE FET VLSI CIRCUITS |
摘要 |
A digital logic circuit using Schottky diodes as the nonlinear logic element, a single power supply and an E-mode MESFET as an inverter in the open drain configuration. Temperature compensation of the threshold voltage of the E-mode FET is provided. The circuit is particularly suited for use with a GaAs substrate. |
申请公布号 |
AU7853887(A) |
申请公布日期 |
1988.04.21 |
申请号 |
AU19870078538 |
申请日期 |
1987.08.17 |
申请人 |
HONEYWELL INC., |
发明人 |
GARY M. LEE;ANDRZEJ PECZALSKI |
分类号 |
H03K19/0944;H03K19/003;H03K19/0952;H03K19/0956 |
主分类号 |
H03K19/0944 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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