发明名称 SCHOTTKY DIODE LOGIC FOR E-MODE FET/D-MODE FET VLSI CIRCUITS
摘要 A digital logic circuit using Schottky diodes as the nonlinear logic element, a single power supply and an E-mode MESFET as an inverter in the open drain configuration. Temperature compensation of the threshold voltage of the E-mode FET is provided. The circuit is particularly suited for use with a GaAs substrate.
申请公布号 AU7853887(A) 申请公布日期 1988.04.21
申请号 AU19870078538 申请日期 1987.08.17
申请人 HONEYWELL INC., 发明人 GARY M. LEE;ANDRZEJ PECZALSKI
分类号 H03K19/0944;H03K19/003;H03K19/0952;H03K19/0956 主分类号 H03K19/0944
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