发明名称 SEMICONDUCTOR INTEGRATION DELAYING CIRCUIT
摘要 PURPOSE:To constitute the delaying circuit without causing an increase of a chip size by a MOS transistor capacity, by providing an inverter element which has connected a gate electrode of a MOS transistor for constituting a capacity element to an input terminal, and also, has connected a source electrode and a drain electrode which have been connected in common, to an output terminal. CONSTITUTION:A gate electrode of a MOS transistor for constituting a capacity element C1 is connected to an input of an inverter I2, and also, a source electrode and a drain electrode which have been connected in common are connected to an output of the inverter I2. In this state, when an input signal is inputted, a signal whose phase is opposite to that of the input signal is transferred to an input A point of the inverter I2 by an inverter I1, and a signal whose phase is opposite to that of the A point is transferred to an input B point of an inverter I3 by the inverter I2. In this case, due to a change/discharge action of the capacity element C1 and a Miller effect, a signal waveform of the A and B points can obtain a rounding delay. A signal which has given a delay to the input signal is outputted from an inverter I4.
申请公布号 JPS6390914(A) 申请公布日期 1988.04.21
申请号 JP19860236861 申请日期 1986.10.03
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 MARUYAMA SHIGERU
分类号 H03K5/13;H03K5/133 主分类号 H03K5/13
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