发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To protect an input gate from surging by providing an input protecting circuit having a bipolar transistor TR connected to a bias circuit and a circuit consisting of two diodes whose anode electrodes and cathode electrodes are connected in parallel with opposite polarities. CONSTITUTION:A bipolar TR 1 has a base electrode biased by resistances 2 and 3 so that a certain current flows, and a collector electrode is connected to an input terminal 10, and an emitter electrode is connected to an output terminal 11. The circuit which supplies the bias to the base electrode of the bipolar TR 1 is adjusted by resistances 2 and 3 connected between power terminals 16 and 17. If a surge is inputted to the input terminal 10, the current flows from the input to a power source by a diode 6 in case of a positive surge, and the current flows from the power source to the input by a diode 5 in case of a negative surge. Thus, the bipolar TR 1 functions to limit the current flowing to diodes.
申请公布号 JPS6390208(A) 申请公布日期 1988.04.21
申请号 JP19860236541 申请日期 1986.10.03
申请人 NEC CORP 发明人 MAETA TADASHI
分类号 H01L29/812;H01L21/338;H01L27/06;H01L29/80;H03K17/08;H03K17/16;H03K19/003 主分类号 H01L29/812
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