| 摘要 |
PURPOSE:To monitor the position of SOR light by passing SOR light and setting a thin film of high emissivity at the effective measuring wave length area of an infrared ray detector in a beam line. CONSTITUTION:A chamber is set between a SOR light generating point 3 at an electronic accumulating ring 1 and an oscillating mirror 11 for oscillating SOR light 4 up and down, and a SiN film which makes a Si wafer a support frame therein is vertically set in a beam line 5 of the SOR light 4. The temperature increase of the film 7 is measured by an infrared image device 9 through a infrared ray permeating window 8 which is attached to the chamber at 145 deg. to a beam line 5 of the light in the backward direction. The temperature increasing part in the film 7 is always monitored by a CRT 10, and a pattern transfer is stopped in the case where a dislocation is produced. |
