发明名称 |
PROCESS FOR FORMING EPITAXIALLY EXTENDED POLYCRYSTALLINE STRUCTURES |
摘要 |
Disclosed is a process for reducing microcracks and microvoids in the formation of polycrystalline (polysilicon) structures from initial layers of amorphous silicon by annealing. In annealing of amorphous silicon to the polycrystalline form, the crystal grains are thickness limited; and thus by maintaining the thickness below 1000 angstroms, the spacing between contrasting material forming the crystal grains can be minimized on anneal. The resultant equiaxial grains are used as seed crystals for epi-like growth of silicon from them into the required or desired layer thickness. |
申请公布号 |
EP0051249(B1) |
申请公布日期 |
1988.04.20 |
申请号 |
EP19810108974 |
申请日期 |
1981.10.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOO, VEN YOUNG |
分类号 |
H01L21/20;H01L21/205;H01L21/324;H01L21/768;H01L29/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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