| 摘要 |
PURPOSE:To improve sensitivity of the titled body at a long wave length range by laminating an amorphous photoconductive layer comprising a silicon atom as a base material as a 1st. layer, and a amorphous photoconductive layer composed of the silicon atom and a germanium atom as a 2nd. layer on a conductive support. CONSTITUTION:The amorphous photoconductive layer 3 as the 1st. layer which contains 0.01-1atomic% nitrogen atom and 10<-4>-10<-2>atom% boron atom as the base material, and the amorphous photoconductive layer 4 as the 2nd layer which is composed of the silicon atom and the germanium atom, and contains 0.01-0.1atom% nitrogen atom and 5X10<-3>atom% boron atom, are formed on the conductive support. The conductive support is formed by a conductive substrate 1 and blocking layer 2. A surface protective layer 5 is finally provided on the layer 4. Said layer 5 is necessary to be translucent and high resistance and has preferably 500-5,000Angstrom film thickness. Thus, the titled body has sufficient sensitivity and electrification at a long wavelength range. |
