发明名称 |
Protection of integrated circuits from electric discharge |
摘要 |
Described is an integrated semiconductor structure for the protection from electrical discharges of electrostatic origin of particularly sensitive components of an integrated circuit. The structure is almost entirely formed directly underneath a particular input pad thus requiring a minimum useful area and is characterized by very high damaging voltage and speed of intervention because of the extremely low series resistance of the two zener junctions constituting the structure.
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申请公布号 |
US4739378(A) |
申请公布日期 |
1988.04.19 |
申请号 |
US19870015650 |
申请日期 |
1987.02.17 |
申请人 |
SGS MICROELETTRONICA S.P.A. |
发明人 |
FERRARI, PAOLO;BERTOTTI, FRANCO |
分类号 |
H01L27/04;H01L21/822;H01L27/02;(IPC1-7):H01L29/90 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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