| 摘要 |
PURPOSE:To obtain a long life and compact semiconductor Roman laser by using an implantation type semiconductor laser as an excitation light source. CONSTITUTION:In the case of GaP Roman laser 1, an incident light 4 emitting by a YAG laser comes at a weight of 1MW-2MW and a beam diameter of around 1 mmphi is that of a typical instance. Accordingly, once a semiconductor laser beam is used as the incident light 4 and when a pulse input power is 1 W, a beam having 1 mum enables such a laser to obtain inputs having an almost equal density and to carry out Roman oscillations. The semiconductor laser 2 and semiconductor Roman laser 1 are so integrated on one semiconductor substrate that it is unnecessary for them to have a specific external optical system such as a microscope and the like. Yet, a compact and long lived laser can be achieved. |
