发明名称 MANUFACTURE OF ION INDUCTION FIELD-EFFECT TRANSISTOR
摘要 The invention relates to a process for manufacturing a REFET and/or CHEMFET, comprising: a) covalent bonding of a hydrophilic polymer layer to an isolator layer applied to a semiconductor material; b) the absorption of water or a watery solution into said hydrophilic polymer layer; and c) the binding of a hydrophobic polymer layer to the water holding hydrophilic polymer layer. It is advantageous that this water holding hydrophilic polymer layer also contains an electrolyte and/or a buffer. Preferably an ion to be measured with the CHEMFET also forms part of the electrolyte.
申请公布号 JPS6388439(A) 申请公布日期 1988.04.19
申请号 JP19870222874 申请日期 1987.09.04
申请人 SUTEIKUTOCHINGU SENTORIYUUMU BOOLE MICRO EREKUTORONIKA TOBENTE 发明人 SADOHERUTERU ERUNSUTO YAN ROBERUTO;SUKAURONSUKA PUTASHINSUKA MARIA DANUTA;FUAN DERU UERU PEETERU DAUE;FUAN DEN BERUKU ARUBERUTO;REINHAUTO DEBITSUTO NIKORAASU
分类号 G01N27/00;G01N27/30;G01N27/414;H01L29/78 主分类号 G01N27/00
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