| 摘要 |
An ohmic contact structure and method of forming the same are described which yield a true non-rectifying Schottky junction between a metallic material and a semiconductor material. The two materials are selected so that they satisfy the theoretical requirements for an ideal Schottky junction, with the work function of the metallic material less than that of an n-type semiconductor material and greater than that of a p-type simiconductor material. One of the materials is deposited upon the other by means of an epitaxial process, with the two materials being selected such that the difference in their lattice parameters is less than about 10%, and preferably less than about 5%. This process reduces or entirely eliminates the previous requirement for doping the contact region, and also eliminates a heat cycle that has previously been necessary to fabricate a non-rectifying junction.
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