| 摘要 |
PURPOSE:To obtain the titled device of planar type of a high strength against surge by a mthod wherein the surface of a bi-polar transistor consisting of a collector, a base, and an emitter is kept provided with a control electrode via insulation film, and when the potential of the collector increases, this control electrode is connected to the collector electrode. CONSTITUTION:An N<+> type buried layer 2 is diffusion-formed in the surface layer part of a P type Si substrate 1, and an N type layer 3 serving as the collector is epitaxially grown over the entire surface in cluding said layer and then made in island form by a P<+> type insulation isolation region 4 while including the layer 2. Next, a P type base region 5 is diffusion-formed in the layer 3 made island-formed, and an N type emitter region 6 is provided therein. The entire surface is covered with a thin insulation film 8, apertures are bored, and a base electrode 9 is mounted on the region 5, an emitter electrode 10 on the region 6, and a collector electrode 11 on the layer 3 via N type collector electrode lead- out diffused region 7, respectively. Further, the end surface of the end of the region 9 is kept provided with gate electrode 12 via film 8. When the potential of the layer 3 the collector region increases, the amount of strength against surge is enhanced by contriving the connection of the electrode 12 and 11. |
