发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To prevent corrosion of a conductor pattern at a washing time by exposing an Al alloy metallic film to plasma containing oxygen before the Al alloy metallic film is brought into contact with washing water. CONSTITUTION:Between the etching process and the washing process of a conductor pattern 4, the conductor pattern 4 is exposed to oxygen plasma or air plasma to oxidize the side face of the conductor pattern 4 formed with etching, and an alumina film 42 is formed. As the result, when the pattern 4 is washed in the washing process, the oxidized film 42 is not corroded by washing water, and the pattern 4 is not corroded.
申请公布号 JPS59178681(A) 申请公布日期 1984.10.09
申请号 JP19830054389 申请日期 1983.03.30
申请人 FUJITSU KK 发明人 SEGAWA MIKIO;MAJIMA NIWAJI
分类号 G11C11/14;H01L21/283 主分类号 G11C11/14
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