| 摘要 |
PURPOSE:To reduce parasitic resistance RS making a channel region to hold high resistance by a method wherein a channel region provided as to connect a source region and a drain region coming in contact with the upper sides of both the regions consisting of a silicon thin film added with an impurity, an interlayer insulating film to cover a gate electrode provided on a gate insulating film, and a source electrode and a drain electrode are provided. CONSTITUTION:A source region 102 and a drain region 103 added with an impurity to serve as a donor or acceptor is formed on an insulating substrate 101 consisting of glass, etc. A channel region 104 of polycrystalline silicon thin film is provided as to connect the upper side of the end of the source region and the upper side of the end of the drain region thereof. A gate insulating film 107 consisting of SiO2, etc. is covered on the whole thereof, and a gate electrode 108 consisting of a metal, etc. is provided thereon. Moreover, the whole thereof is covered by an interlayer insulating film 109 consisting of SiO2, etc. Contact holes are opened in the gate insulating film 107 and the interlayer insulating film 109, a source electrode 105 is formed on the source region 102 coming in contact mutually, and a drain electrode 106 is formed on the drain region 103 coming in contact mutually respectively. |
