| 摘要 |
PURPOSE:To form a light emitting diode having a reflective film made of a material whose reflectivity is sufficient for a reflector, adhesive force is large, and reliability is high, by forming an Al reflective film on the opposite surface to a surface for taking out light. CONSTITUTION:On the rear of a p-InP substrate 1, the following are formed in order by epitaxial growth; a p-InP buffer layer 2, an InGaAsP active layer 3, an n-InGaAsP etching stopper layer 4, and an n-InP layer 5. An SiO2 insulative film 6 is formed on the whole rear surface containing a mesa part having a diameter of about 20mum in a central part, and a four-layers electrode 7 of Ti/Pt/Au/Cr is formed in the window of a side surface of the mesa part. A two-layers film 8 of Al/Cr2 is formed on the whole rear surface. When a current is made to flow between electrodes 7 and 11, it flows only in the about 20mum diameter n-InP layer, and the light emitting region in the InGaAsP active layer also is limited. As the result, photo-coupling efficiency with an optical fiber arranged on the surface side of the substrate 1 is increased. A light travelling toward the rear side of all light emitted from the light emitting region of the active layer 3 is reflected at the Al film 8 and travells toward the surface side. |
