| 摘要 |
PURPOSE:To improve the degree of integration by forming a gate electrode on the side wall part of a recess formed in a predetermined region on a semiconductor substrate of a first conductivity type, and, with this electrode as a mask, ion-implanting an impurity of a second conductivity type into the substrate surface thereby to form source and drain regions. CONSTITUTION:After forming an oxide film 2 on the surface of a substrate 1, a resist film 20 having a hole section is formed, and with the film 20 as a mask the substrate 1 is anisotropically etched to form a recess. Then, after removing the film 20, an insulating film 4 is formed on the substrate 1 surface, and further a silicon layer 5 is formed. And, a resist film 21 is formed in the portion in which a gate electrode is to be drawn out. Then, by performing anisotropic etching, leaving the silicon layer 5 on the side wall part of a recess 3 and the part having the photoresist, the other part is removed, thereby forming an electrode 50. And the electrode 50 as a mask As ions 6 are implanted to form source and drain regions 7, 7. Subsequently, after forming an insulating film 8 on the surface, an opening 9 is provided, and a wiring layer 10 is formed. With this, the gate width can be changed without varying the area occupied by the device. |
