| 摘要 |
PURPOSE:To completely remove a marked part by performing a lift-off method as well as to prevent the generation of source of pollusion, caused by the readhesion of a metallic thin film, an electric short-circuit and the like, by a method wherein a part of the resist pattern of a marked part is connected to the resist pattern. CONSTITUTION:To make improvement on a marked part when a mask is designed, the marked parts 21-24 formed with a resist are connected to the circumferential resist part 16. Using the resist pattern formed as above, an SiO2 film 31 is etched using NH4F and the like. Then, a metallic thin film 33, to be used for wiring, is vapor-deposited on the whole surface. Subsequently, using the organic solvent such as acetone and the like, the metallic thin film deposited on the upper part of the resist is lifted off, and a metallic wiring pattern is completed. Besides, the metallic thin film on the marking parts 21-24 can be removed integrally with the metallic thin film on the resist 16 located on the circumference in a simple manner. |
