发明名称 SEMICONDUCTOR FLOW VELOCITY DETECTOR
摘要 <p>PURPOSE:To reduce the variation in output, by covering a semiconductor flow velocity detection element and a fluid temp. measuring transistor with a heat insulating material and further covering the periphery of said heat insulating material with a material having excellent heat conductivity. CONSTITUTION:A semiconductor flow detection element 1 having a heat generating transistor and a substrate temp. measuring transistor formed thereto and a fluid temp. measuring transistor 2 are covered with a heat insulating material 3 and the periphery of said heat insulating material 3 is further covered with a good heat conductive material 4 and both of the element 1 and the transistor 2 are embedded in the pipe wall of a pipe 5 in close vicinity to each other. By this method, temp. is uniformized on the surface of the good heat conductive material 4 and local temp. distribution is eliminated. By allowing the semiconductor flow velocity detection element 1 and the fluid temp. measuring transistor 2 to approach each other, temp. difference is reduced. As a result, the variation in output is reduced.</p>
申请公布号 JPS6385362(A) 申请公布日期 1988.04.15
申请号 JP19860229740 申请日期 1986.09.30
申请人 TOSHIBA CORP 发明人 SEKIMURA MASAYUKI
分类号 G01F1/68;G01F1/69;G01P5/10;G01P5/12 主分类号 G01F1/68
代理机构 代理人
主权项
地址