| 摘要 |
PURPOSE:To form an SiO2 film and a boron-doped polysilicon film thermal element efficiently on the surface of an enameled substrate using the same device by repeating the formation of a non-doped polysilicon film on the surface of an enamelled substrate and oxidation of the film prearranged times to form an SiO2 film, and further forming a doped polysilicon thermal resistor like boron-doped polysilicon on the SiO2 film. CONSTITUTION:An SiO2 film has at least approx. 500Angstrom thickness, and also is given a required performance as a barrier and an effective growth capability of doped polysilicon. Therefore, a non-doped polysilicon film of less than 250Angstrom is formed using a gas source such as SiH4 at substrate temperature of 650 deg.C under low pressure. Next if SiH4 supply is suspended and O2 is injected for oxidation, an SiO2 film grows. If this process is repeated, an SiO2 film of more than 500Angstrom can easily be formed. Next, O2 supply is suspended, and SiH4 and B2H6 are introduced to provide a growth of boron doped polysilicon film. Consequently the formation of an SiO2 film and a doped polysilicon film on an enamelled substrate can be achieved quickly using the same device. |
