| 摘要 |
PURPOSE:To obtain a semiconductor device having a contact structure having low resistance and high reliability by selectively providing a silicide layer only to a diffusion layer section, choicely burying a metal into a fine hole having a large aspect ratio and then shaping a wiring layer. CONSTITUTION:An LOCOS 2, a gate film 3, polysilicon 4 and MOSi2 are formed onto an silicon substrate 1. A low-concentration diffusion layer 6 shaped, using an electrode as a mask, a side wall film 7, a high-concentration diffusion layer 8 and a TiSi2 layer 9 selectively formed only onto the high-concentration diffusion layer are shaped. An interlayer film 10, an Al alloy film 12 for a wiring and a passivation film 13 are formed onto the layer 9. The W film 8 is buried choicely into a contact hole. Adhesion onto TiSi2 of the W film 8 is improved extremely, and TiSi2 is not bitten and W does not creep up. Since the contact resistance of TiSi2=W=Al alloy is exceedingly small, the total contact resistance is approximately the same as in the case of no buried W. |
