SEMICONDUCTOR MEMORY

摘要

A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor comprises as one main part a plate (8) which consists of the side walls and base of a groove (17) formed in a semiconductor substrate (10), and as another main part a capacitor electrode (19) which is formed on the side walls and the base over an insulation film (18), and is connected electrically to the source or drain (15) of the insulated-gate field-effect transistor.