| 摘要 |
PURPOSE:To effectively form DVD film on the whole surface of a substrate by sending a gas contg. an oxygen atom radical onto a heated substrate to be treated through a diffusion plate while cooling the gas. CONSTITUTION:A semiconductor wafer 12 is placed on the holder 13 in a treating chamber 11 and lifted by a lift 16 to adjust the distance from the diffusion plate 17b of an outflow part 17, and the wafer 12 is heated by a heater 15. Gaseous oxygen and specified gaseous reactants are supplied into the gas outflow part 17 from gas supply sources 20a, 20b, and 20c via flow controllers 19a, 19b, and 19c, and cooled by a cooler 18. The cooled gaseous mixture is injected onto the surface of the heated wafer 12 through the diffusion plate 17b, hence an oxygen atom radical is formed and reacts with the other gaseous reactants, and film is formed on the wafer 12. As a result, a DVD film is uniformly formed on the whole surface of the wafer 12 at a high film forming rate. |
