| 摘要 |
PURPOSE:To produce the title high-quality silicon carbide film at a low cost by using the gaseous acetylene obtained form dissolved acetylene and a silicon- contg. gas to form silicon carbide on a substrate. CONSTITUTION:The main valve 3 of a dissolved acetylene cylinder 1 filled with the mass and a solvent is opened to vaporize gaseous acetylene, and the gaseous acetylene is supplied to a mass flow controller 8 via a pressure regulator 5 and a purifier 7. Mean-while, the main valve 4 of a silane cylinder 2 is opened, and gaseous silane is supplied to a mass flow controller 9 via a pressure regulator 6. The controlled-flow gaseous acetylene and silane are mixed in a gas pipeline 16, and introduced into a reaction chamber 10. The gaseous mixture is decomposed by a glow discharge decomposition means, and amorphous silicon carbide film is formed on the substrate 11. Since the inexpensive dissolved acetylene is thus used, the production cost of alpha-SiC film is reduced. |
