发明名称 |
Optical waveguide having a silicon oxi-nitride layer |
摘要 |
An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N2 and O2 gases.
|
申请公布号 |
US4737015(A) |
申请公布日期 |
1988.04.12 |
申请号 |
US19840674770 |
申请日期 |
1984.11.26 |
申请人 |
HITACHI, LTD. HITACHI CABEL |
发明人 |
ISHIDA, KOJI;MATSUMURA, HIROYOSHI;HIRUMA, KENJI;NAGATSUMA, KAZUYUKI;HONGO, AKIHITO |
分类号 |
G02B6/00;G02B6/02;G02B6/122;G02B6/13;G02B6/132;(IPC1-7):G02B6/00 |
主分类号 |
G02B6/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|