Dynamic random access memory device having a plurality of one-transistor type memory cells

摘要

A dynamic memory device having a plurality of one-transistor type memory cells is disclosed. The memory device has a plurality of pillar-like semiconductor protrusions. The transfer gate transistor of a memory cell is formed along the upper portion of the pillar-like semiconductor protrusion such that its channel region is positioned at a side surface of the upper portion, and the storage capacitor of the memory cell is formed along the lower portion of the pillar-like semiconductor protrusion.