SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE:To obtain linear light emission with excellent convergence and uniformity by a method wherein at least one protruding stripe which is extended on one surface of a plane part crossing the surface is provided and a light emitting region which includes P-N junctions which is provided in the protruding stripe along its whole length is formed. CONSTITUTION:This light emitting device is composed of an N-type GaAs plane part (substrate) B, a narrow square pillar shape protruding stripe P which is made of N-type GaAs and formed linearly on one surface of the substrate B, positive side electrodes E1 which are provided on both the sides of the protruding stripe P and on the surface of the substrate B where the protruding stripe P is formed, a negative side electrode E2 which is provided on the bottom surface of the substrate B and insulating films 1 which are provided between the upper surface of the substrate B and the electrodes E1. In the protruding stripe P, a P-type impurity is diffused along both the side walls of the protruding stripe P to form a light emitting region which is extended vertically to the substrate B and P-N junctions PN are formed at the diffusion fronts of the impurity. When a current is applied between the electrodes E1 and E2, light is emitted linearly to the vertical direction to the substrate B by the light emitting region including the P-N junctions PN in the protruding stripe P. The current flows through the P-N junctions PN from the electrodes E1 on both the sides of the protruding stripe P into the electrode E2 on the bottom surface of the substrate B.