| 摘要 |
<p>PURPOSE:To control the flow of a transient, large, reverse current to be generated upon application of a sharp reverse voltage and thereby to protect a diode from destruction by a method wherein an N-type layer to be a base width region is formed to be larger than the theoretical expansion of a depletion layer to be created upon application of a yield voltage in a P<+>-N-N<+> type silicon element diode chip. CONSTITUTION:In this design, even when the yield voltage of a laminated type high- tension diode 1 is not lower than 500V per diode chip, a sharp reverse voltage applied upon spark plug discharge may be satisfactorily met, and not more than two high- tension diodes are connected in series per cylinder. That is, a laminated type light- tension diode 1 is constituted of a laminate of diode chips 7 and laminating material 11 piled one upon the other alternately, a pair of electrode leads 12 connected to both sides of the resultant laminate, and an insulating material 13 that is for example glass in which the laminate is molded. In this way, a diode chip base width region may be formed to be more than two times larger than the expansion of a depletion layer to be generated upon application of a yield voltage to the diode chip. With the base width region serving as a limiting resistor, a transient, large, reverse current to follow the application of a sharp reverse voltage may be effectively controlled, which prevents a diode from deterioration.</p> |
