| 摘要 |
<p>PURPOSE:To enable the growth of a silicon layer, which is of desired conductivity type and impurity concentration and is lattice matched with a substrate, by changing temperatures of a silicon wafer, raw crystal, and solution periodically up and down within a constant-temperature range and making the layers grow in thickness on the wafer in accordance with temperature cycles. CONSTITUTION:While substrates 1 and 2 are juxtaposed and a space between them is filled with solution 3 in which solute is dissolved in a saturation state, a temperature is changed up and down. when a specific weight of the solute is smaller than that of its solvent, epitaxial growth of a film can be performed in arbitrary thickness in accordance with the number of temperature cycles, on the substrate 1 while the substrate 2 is used as a source. On the other hand, when the specific weight of the solute is larger than that of its solvent, epitaxial growth occurs on the substrate 2 while the substrate 1 is used as a source. In the process of a silicon device, for example, In and Sn are available for solvents in N type growth and GaAl-Sn and the like are available for those in P type growth. A silicon wafer of prescribed impurity concentration and a silicon source are formed on the substrates 1 and 2, respectively.</p> |
