Thin-film resistor

摘要

A thin-film resistor comprising a thin film of a nitride of at least one element belonging to groups III-VI of the periodic table. The thin-film resistor has a metal oxide layer comprising at least one metal oxide selected from the group consisting of manganese oxide, iron oxide, cobalt oxide, nickel oxide, zinc oxide, indium oxide, tin oxide and indium tin oxide interposed between the nitride thin film and an electrode for external connection.