| 摘要 |
PURPOSE:To provide high dark resistance and positive chargeability by forming a specified photoconductive amorphous silicon carbide layer contg. 0.1-10,000ppm group IIIa element of the periodic table on a substrate. CONSTITUTION:A photoconductive amorphous silicon carbide (a-SiC) layer 5c is formed on a substrate 1. The a-SiC layer 5c is composed essentially of a first layered region 6, a second layered region 7, a third layered region 8 and a fourth layered region 9 arranged in this order from the substrate 1 side toward the surface of the resulting sensitive body. The third region 8 contains a larger amount of C than the second region 7, and the fourth region 9 contains a larger amount of C than the third region 8. The second region 7 contains 0.1-10,000ppm group IIIa element of the periodic table, and the first region 6 contains a larger amount of the group IIIa element than the second region 7. The resulting sensitive body is made especially positively chargeable, high dark resistance and superior photosensitivity are provided, and a protective surface layer and a carrier injection blocking layer are made practically unnecessary. |
