| 摘要 |
PURPOSE:To provide high dark resistance and negative chargeability by forming a photoconductive amorphous silicon carbide layer contg. 0-10,000ppm group Va element in the periodic table on a substrate. CONSTITUTION:When a photoconductive amorphous silicon carbide (a-SiC) layer 5 is formed on a substrate 1 by a thin film forming means, high dark resistance is obtd. The a-SiC layer 5 contains 1-90atom% C, or 1-90atom% C and 5-50atom% H. The negative chargeability of the resulting sensitive body can be advantageously enhanced by doping the a-SiC layer 5 with 0-10,000ppm, preferably 0-1,000ppm group Va element in the periodic table. |
