| 摘要 |
PURPOSE:To stabilize the sensitivity of resist while enabling the the sensitivity to be adjusted by a method wherein a substrate to be processed, after being baked at the temperature exceeding that in a glass transition point region of resist, is annealed for specified time at the temperature in said region before development process. CONSTITUTION:A sheet to be processed such as a mask substrate or a wafer substrate etc. is coated with resist 1 by spin coating process or immersion process to be quenched 3 after baking 2 at the temperature exceeding that in Tg region. Then, the resist, after exposure 4, is annealed 5 at the temperature in Tg region to adjust the sensitivity of resist for selective development of exposed part. The sensitivity adjustment can be performed by annealing process before or after exposure if the baking and quenching processes are finished. When the resist is baked at the temperature exceeding that in Tg region to be quenched later, the enthalpy can be maintained at high level. Through these procedures, the annealing process in Tg region can moderately adjust the enthalpy to adjust the sensitivity of resist indirectly. |
